Dong-Shong Liang, K. Gan, Chung-Chih Hsiao, Cher-Shiung Tsai, Y. Chen, Shih-Yu Wang, Shun-Huo Kuo, Feng-Chang Chiang, Long-Xian Su
{"title":"Novel voltage-controlled oscillator design by MOS-NDR devices and circuits","authors":"Dong-Shong Liang, K. Gan, Chung-Chih Hsiao, Cher-Shiung Tsai, Y. Chen, Shih-Yu Wang, Shun-Huo Kuo, Feng-Chang Chiang, Long-Xian Su","doi":"10.1109/IWSOC.2005.87","DOIUrl":null,"url":null,"abstract":"This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2 V power supply. This VCO is fabricated by 0.35 /spl mu/m CMOS process and occupied an area of 120 /spl times/ 86 /spl mu/m/sup 2/.","PeriodicalId":328550,"journal":{"name":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","volume":"97 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-07-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"7","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Fifth International Workshop on System-on-Chip for Real-Time Applications (IWSOC'05)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSOC.2005.87","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 7
Abstract
This paper describes the design of a voltage-controlled oscillator (VCO) based on the negative differential resistance (NDR) devices. The NDR devices used in the work is fully composed by the metal-oxide-semiconductor field-effect-transistor (MOS) devices. This MOS-NDR device can exhibit the NDR characteristic in its current-voltage curve by suitably arranging MOS parameters. The VCO is constructed by three low-power MOS-NDR inverter. This novel VCO has a range of operation frequency from 151MHz to 268MHz. It consumes 24.5mW in its central frequency of 260MHz using a 2 V power supply. This VCO is fabricated by 0.35 /spl mu/m CMOS process and occupied an area of 120 /spl times/ 86 /spl mu/m/sup 2/.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
