30.4 A 1Tb 3b/Cell 3D-Flash Memory in a 170+ Word-Line-Layer Technology

Abstract

This work demonstrates a novel 1Tb 3D Flash memory chip that has an area efficiency of 10.4Gb/mm2 in a 3b/cell technology. Using a circuit under array (CUA) design technique and over 170 word-line (WL) layers, the chip achieves 33% higher bit density than prior 3b/cell work [1], and better density than in 4b/cell technology [3]. This paper discusses the challenges advanced 3D Flash memories face: using over 100 WL layers results in large parasitic loads and decreases read/program speed, and its complicated operation increases test costs. On the other hand, as high bandwidth is also required, this chip supports a 2.0Gbps IO transfer rate, while maintaining signal integrity. This work introduces four new key technologies to address these difficulties. 1) Asynchronous independent plane read (AIPR), with a 4-plane architecture to improve system-level performance. 2) Enhanced sensing that enables faster read time $(t_{R})$. 3) IO-DCC (duty cycle correction) training for high-speed DDR operation. 4) A scan chain to improve test coverage and cost effectiveness.