High-Resolution Wafer Surface Topology Measurement Using Phase-Shifting Shadow Moiré Technique

S. Wei, E. Guan, I. Kao, F. Chiang
{"title":"High-Resolution Wafer Surface Topology Measurement Using Phase-Shifting Shadow Moiré Technique","authors":"S. Wei, E. Guan, I. Kao, F. Chiang","doi":"10.1115/imece1999-0912","DOIUrl":null,"url":null,"abstract":"\n The traditional shadow moiré technique has been employed, using the fringe pattern information and numerical interpolation, to construct the wafer surface topology. In this paper, phase-shifting shadow moiré technique is discussed and applied to the measurement of wafer surface topology with high resolution. The phase-shifting technique takes advantage of the gray level information to increase the physical resolution of the measurement. A series of fringe patterns are recorded while they are shifted by moving the wafer along the direction perpendicular to wafer surface. The phase is encoded in the variations in the intensity pattern of the recorded fringe images, and a simple point-by-point calculation recovers the phase. The needs to locate the fringe centers and interpolation are eliminated. Since the depth variation of wafer surface is very small, usually within the range of 0.1 to 20 microns, very fine grating is required in order to capture the small depth variation. However, very fine grating will introduce strong diffraction effect which blurs the fringe patterns. In this study, the Talbot distance is applied to obtain images with good contrast. The phase shift is realized by moving the wafer to change the distance between the wafer surface and the reference grating. A four-step phase wrapping algorithm is used to calculate the phase. The phase pattern recovered from four fringes patterns is presented. Future work such as how to reduce the noise, how to do phase unwrapping and calibration is also discussed.","PeriodicalId":153178,"journal":{"name":"Electronics Manufacturing Issues","volume":"48 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-11-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Electronics Manufacturing Issues","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1115/imece1999-0912","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

The traditional shadow moiré technique has been employed, using the fringe pattern information and numerical interpolation, to construct the wafer surface topology. In this paper, phase-shifting shadow moiré technique is discussed and applied to the measurement of wafer surface topology with high resolution. The phase-shifting technique takes advantage of the gray level information to increase the physical resolution of the measurement. A series of fringe patterns are recorded while they are shifted by moving the wafer along the direction perpendicular to wafer surface. The phase is encoded in the variations in the intensity pattern of the recorded fringe images, and a simple point-by-point calculation recovers the phase. The needs to locate the fringe centers and interpolation are eliminated. Since the depth variation of wafer surface is very small, usually within the range of 0.1 to 20 microns, very fine grating is required in order to capture the small depth variation. However, very fine grating will introduce strong diffraction effect which blurs the fringe patterns. In this study, the Talbot distance is applied to obtain images with good contrast. The phase shift is realized by moving the wafer to change the distance between the wafer surface and the reference grating. A four-step phase wrapping algorithm is used to calculate the phase. The phase pattern recovered from four fringes patterns is presented. Future work such as how to reduce the noise, how to do phase unwrapping and calibration is also discussed.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
基于相移阴影成像技术的高分辨率晶圆表面拓扑测量
采用传统的阴影渐变技术,利用条纹图案信息和数值插值来构造晶圆表面拓扑结构。本文讨论了相移阴影成像技术,并将其应用于高分辨率的晶圆表面拓扑测量中。相移技术利用灰度信息来提高测量的物理分辨率。当晶圆片沿着垂直于晶圆表面的方向移动时,记录了一系列的条纹图案。相位被编码在记录的条纹图像的强度模式的变化中,并且一个简单的逐点计算恢复相位。消除了定位条纹中心和插值的需要。由于晶圆片表面的深度变化很小,通常在0.1 ~ 20微米的范围内,因此需要非常精细的光栅来捕捉微小的深度变化。但是,非常细的光栅会产生强烈的衍射效应,使条纹图案模糊。在本研究中,塔尔博特距离被用于获得具有良好对比度的图像。通过移动晶片来改变晶片表面与参考光栅之间的距离来实现相移。采用四步相位包络算法进行相位计算。给出了从四种条纹图中恢复的相位图。讨论了如何降低噪声、相位展开和校准等今后的工作。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Integrated Transient Thermal and Mechanical Analysis of Molded PBGA Packages During Thermal Shock Constitutive and Cyclic Damage Model of 63Sn-37Pb Solder Thermal Issues That Arise due to Manufacturing Processes: Evaluation and Measurement Techniques Process Characterization and the Effect of Process Defects on Flip Chip Reliability Computational Model for Free Abrasive Machining of Brittle Silicon Using a Wiresaw
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1