A monolithic 60 GHz diode mixer in FET compatible technology

Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium Pub Date : 1989-06-12 DOI:10.1109/MCS.1989.37270

B. Adelseck, A. Colquhoun, J. Dieudonné, G. Ebert, J. Selders, K. Schmegner, W. Schwab

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引用次数: 13

Abstract

A method of simultaneously fabricating MESFETs with a maximum frequency of oscillation (f/sub max/) of 70 GHz and Schottky diodes with a gain-bandwidth product (f/sub T/) of approximately=2300 GHz to produce a 60-GHz mixer is given. A deep selective n/sup +/ implantation for a buried n/sup +/ zone under the mixer diode was used. Metalorganic chemical vapor deposition (MOCVD) was used for the growth of the active n layer and an n/sup +/ surface contact layer. The MESFETs and the diodes were both fabricated with a recessed Schottky contact structure using Ti-Pt-Au metallization. Arrays of 30 different diodes and 55 different MESFETs were fabricated to study the process technology and to get optimum devices for a receiver chip containing a diode balanced mixer plus a low-noise intermediate-frequency (IF) amplifier. The conversion loss and noise figures of the diodes were measured and compared with those obtained from computer simulations. Both large- and small-signal analysis are included. The 60-GHz balanced mixer chip shows a conversion loss of 6.0 dB and a double-sideband noise figure of 3.3 dB.<>

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FET兼容技术的单片60 GHz二极管混频器

给出了一种同时制造最大振荡频率(f/sub max/)为70 GHz的mesfet和增益带宽积(f/sub T/)约为2300 GHz的肖特基二极管以产生60 GHz混频器的方法。在混合器二极管下方埋入n/sup +/区，采用深度选择性n/sup +/注入。采用金属有机化学气相沉积(MOCVD)法制备活性n层和n/sup +/表面接触层。mesfet和二极管均采用Ti-Pt-Au金属化的凹槽肖特基触点结构制造。采用30个不同的二极管和55个不同的mesfet阵列，研究了包含二极管平衡混频器和低噪声中频放大器的接收芯片的工艺技术，并获得了最佳器件。测量了二极管的转换损耗和噪声，并与计算机模拟结果进行了比较。包括大信号和小信号分析。60 ghz平衡混频器芯片的转换损耗为6.0 dB，双面带噪声系数为3.3 dB.>

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Digest of Papers.,Microwave and Millimeter-Wave Monolithic Circuits Symposium

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