Single balanced down-conversion mixer utilizing indium arsenide nanowire MOSFETs

Abstract

We have fabricated single balanced downconversion mixer circuits using InAs nanowire MOSFETs as both active and passive devices. This is achieved by a combination of electron beam lithography and UV-lithography with a line width of 12 μm. The circuits exhibit a low frequency voltage conversion gain of 6 dB, a -3 dB cutoff frequency of 2 GHz and a power consumption of 3.8 mW, while operating at a supply voltage of 1.5 V. The circuits retain circuit functionality even for a supply voltage of 1 V.