{"title":"Higher k HfTaTiO gate dielectric with improved material and electrical characteristics","authors":"N. Lu, H. Li, M. Gardner, D. Kwong","doi":"10.1109/DRC.2005.1553129","DOIUrl":null,"url":null,"abstract":"Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved Vth instability than HfO2. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553129","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3
Abstract
Physical and electrical characteristics of HfTaTiO gate dielectric have been systematically investigated for the first time. HfTaTiO has a higher dielectric constant (kappa~56) and acceptable barrier height to Si (phi=1.0eV), and ultra-thin EOT(~9Aring) has been achieved. HfTaTiO dielectric shows higher crystallization temperature (900degC), reduced hysteresis, 50% higher mobility and improved Vth instability than HfO2. Moreover, HfTaTiO exhibits excellent SILC and breakdown characteristics
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