Broadband GaN-Based Power Amplifier MMIC and Module for V-Band Measurement Applications

D. Schwantuschke, P. Brückner, R. Amirpour, A. Tessmann, M. Kuri, M. Riessle, H. Massler, R. Quay
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引用次数: 4

Abstract

This work presents a balanced GaN-based power amplifier targeting the entire V-band frequency range. The fabricated chip was packaged in a split block WR-15 waveguide environment to make it applicable for high-power measurement applications. The designed GaN MMIC provides a high small-signal gain of more than 20 dB within a frequency range of 49 GHz up to 83 GHz. On-wafer large-signal measurements of the MMIC at 75 GHz demonstrate a linear gain of 26.3 dB, along with a saturated output power of 29.3 dBm (850 mW) and a maximum power added efficiency of 13.5 % For the assembled module, an average saturated output power of 28.1 dBm (645 mW) within a variance of ±0.4 dB has been measured for the entire V-band (50–75 GHz).
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用于v波段测量应用的宽带gan功率放大器MMIC和模块
本文提出了一种针对整个v波段频率范围的平衡型氮化镓功率放大器。该芯片封装在WR-15分块波导环境中,使其适用于高功率测量应用。设计的GaN MMIC在49 GHz至83 GHz的频率范围内提供超过20 dB的高小信号增益。MMIC在75 GHz的片上大信号测量显示线性增益为26.3 dB,饱和输出功率为29.3 dBm (850 mW),最大功率增加效率为13.5%。对于组装模块,在整个v波段(50-75 GHz)测量到的平均饱和输出功率为28.1 dBm (645 mW),误差为±0.4 dB。
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