{"title":"High growth rate Gallium Phosphide for red LEDs","authors":"S. Farrell, C. Ebert, D. Dyer","doi":"10.1109/ICIPRM.2013.6562611","DOIUrl":null,"url":null,"abstract":"Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.","PeriodicalId":120297,"journal":{"name":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2013-05-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2013 International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2013.6562611","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Growth rates of up to 17 microns per hour for Gallium Phosphide grown by MOCVD are achieved and material doping properties are analyzed.
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