J. Shealy, M. Mondry, M. Heimbuch, M. Thompson, S. Denbaars
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引用次数: 1
Abstract
Recently, we demonstrated improved breakdown characteristics in 1 -pm gate length AlInAdGaInAs HEMT utilizing (1) ajunction to modulate the 2-DEG and (2) regrowth of the ohmic contact regions by MOCVD[1]. The remaining challenge has been to demonstrate a high frequency device with improved breakdown characteristics. We present a 0.2pm junction modulated HEMT (JHEMT) with both high frequency performance as well as high breakdown characteristics.
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