K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau
{"title":"Electrical transport across the heterointerface of InP membranes bonded oxide-free on Si","authors":"K. Pantzas, A. Itawi, L. Couraud, J. Esnault, E. Le Bourhis, G. Patriarche, G. Beaudoin, I. Sagnes, J. Streque, A. Talneau","doi":"10.1109/ICIPRM.2014.6880572","DOIUrl":null,"url":null,"abstract":"A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.","PeriodicalId":181494,"journal":{"name":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-05-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"26th International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2014.6880572","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
A n-InP/n-Si isotype heterojunction is fabricated using direct oxide-free bonding, to study electrical transport in this hybrid material system. The band alignment is first evaluated numerically and a theoretical I(V) curve is discussed. The diode is then fabricated and the experimental I(V) curve is compared against theory.
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