C. Ndiaye, V. Huard, R. Bertholon, M. Rafik, X. Federspiel, A. Bravaix
{"title":"Layout Dependent Effect: Impact on device performance and reliability in recent CMOS nodes","authors":"C. Ndiaye, V. Huard, R. Bertholon, M. Rafik, X. Federspiel, A. Bravaix","doi":"10.1109/IIRW.2016.7904894","DOIUrl":null,"url":null,"abstract":"In this paper, we analyze the impact of Layout Dependent Effect (LDE) observed on MOSFETs. It is shown that changing the Layout have an impact on MOSFET device parameters and reliability. Here, we studied the Well Proximity Effect (WPE), Length of diffusion (LOD) and Oxide Spacing Effect (OSE) impacts on device MOSFET parameters and reliability. We also analyzed SiGe impacts on LDE, since it is commonly used to boost device performance.","PeriodicalId":436183,"journal":{"name":"2016 IEEE International Integrated Reliability Workshop (IIRW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1900-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE International Integrated Reliability Workshop (IIRW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IIRW.2016.7904894","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14
Abstract
In this paper, we analyze the impact of Layout Dependent Effect (LDE) observed on MOSFETs. It is shown that changing the Layout have an impact on MOSFET device parameters and reliability. Here, we studied the Well Proximity Effect (WPE), Length of diffusion (LOD) and Oxide Spacing Effect (OSE) impacts on device MOSFET parameters and reliability. We also analyzed SiGe impacts on LDE, since it is commonly used to boost device performance.
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