Amorphous oxide electronics

Abstract

Summary form only given. Oxide semiconductors are known for their optical transparency and high electron mobility even when processed at room temperature, making them a promising candidate for the next-generation thin film transistor (TFT) technology. Compared to existing well-established TFT technologies, the oxide transistor shows superiority in terms of process simplicity and cost, and stable device behaviour in the dark. While its non-uniformity over large areas is comparable to that of thin film silicon transistors, its photo-instability at low wavelengths can be an issue due to persistence in photoconductivity. This talk will discuss progress and issues related to oxide transistors for large area applications, and in particular, show how the material can be tuned for displays and imaging applications.