{"title":"DHEM: Ohmic Contact and High-Mobility Channel Engineering and Characterization for ICs","authors":"A. Joshi, B. Basol","doi":"10.31399/asm.edfa.2020-4.p010","DOIUrl":null,"url":null,"abstract":"\n Differential Hall effect metrology (DHEM) provides depth profiles of all critical electrical parameters through semiconductor layers at nanometer-level depth resolution. This article describes the relatively new method and shows how it is used to measure mobility and carrier concentration profiles in different materials and structures.","PeriodicalId":431761,"journal":{"name":"EDFA Technical Articles","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2020-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"EDFA Technical Articles","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.edfa.2020-4.p010","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Differential Hall effect metrology (DHEM) provides depth profiles of all critical electrical parameters through semiconductor layers at nanometer-level depth resolution. This article describes the relatively new method and shows how it is used to measure mobility and carrier concentration profiles in different materials and structures.
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