{"title":"PAE enhancement by intermodulation cancellation in an InGaP/GaAs HBT two-stage power amplifier MMIC for W-CDMA","authors":"T. Hirayama, N. Matsuno, M. Fujii, H. Hida","doi":"10.1109/GAAS.2001.964350","DOIUrl":null,"url":null,"abstract":"We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.","PeriodicalId":269944,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-10-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"20","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 23rd Annual Technical Digest 2001 (Cat. No.01CH37191)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.2001.964350","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 20
Abstract
We developed an InGaP/GaAs heterojunction bipolar transistor (HBT) two-stage power amplifier monolithic microwave integrated circuit (MMIC) for 1.95-GHz W-CDMA. In this MMIC, intermodulation distortion (IMD) cancellation between the driver- and final-stage HBTs occurs, so we can reduce an adjacent-leakage-power-ratio (ACPR) and enhance power-added efficiency (PAE) by balancing the bias currents for each stage. The MMIC has a high PAE of 44%, an output power of 26.0 dBm, and a gain of 27.9 dB with ACPR of -35 dBc at a 5-MHz offset frequency under a supply voltage of 3.6 V. This PAE represents state-of-the-art performance of HBT MMICs for W-CDMA.
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