A 1-V CMOS/SOI bluetooth RF transceiver for compact mobile applications

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221179

M. Ugajin, A. Yamagishi, J. Kodate, M. Harada, T. Tsukahara

引用次数: 12

Abstract

A Bluetooth RF transceiver in 0.2-/spl mu/m CMOS/SOI achieves 1-V operation and paves the way for further system-size reduction by using a small NiH battery. The transceiver integrates a T/R switch, an image-reject mixer, a quadrature demodulator, gm-C filters, an LC-tank voltage-controlled oscillator, a PLL, and a power amplifier. The phase shifter in the quadrature demodulator is tuned dynamically to deal with carrier-frequency drift. A gm cell in the filters uses depletion-mode PMOS transistors and has a folded structure. The transceiver shows -77-dBm sensitivity at 0.1% BER.

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1 v CMOS/SOI蓝牙射频收发器，适用于紧凑型移动应用

0.2-/spl mu/m CMOS/SOI的蓝牙射频收发器实现1 v操作，并通过使用小型NiH电池为进一步减小系统尺寸铺平了道路。收发器集成了一个收发开关、一个图像抑制混频器、一个正交解调器、gm-C滤波器、一个LC-tank压控振荡器、一个锁相环和一个功率放大器。正交解调器中的移相器是动态调谐的，以处理载波频率漂移。滤波器中的gm单元使用耗尽模式PMOS晶体管并具有折叠结构。收发器在0.1% BER下的灵敏度为-77-dBm。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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