Micro programmable built-in self repair for SRAMs

Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004. Pub Date : 2004-08-09 DOI:10.1109/MTDT.2004.14

Rita Zappa, C. Selva, Danilo Rimondi, C. Torelli, M. Crestan, G. Mastrodomenico, L. Albani

{"title":"Micro programmable built-in self repair for SRAMs","authors":"Rita Zappa, C. Selva, Danilo Rimondi, C. Torelli, M. Crestan, G. Mastrodomenico, L. Albani","doi":"10.1109/MTDT.2004.14","DOIUrl":null,"url":null,"abstract":"A built-in self-repair (BISR) machine is herewith proposed, able to test at speed and repair embedded static random access memories. Unlike the common approach to blow laser-fuse registers, here the repair operation is completely accomplished by the BISR machine, with no external intervene. The information related to the repair operation is stored into an on-chip FLASH memory. The machine is user programmable, since it can test memories of different capacity, architecture and aspect ratio, with up to four test algorithms and two test flows. An \"industrial\" test flow is intended for production; while, in case of failure, a more complex \"screening flow\" allows to distinguish whether the unsuccessful repair operation is due to exceeded redundancy capacity or to faulty FLASH programming. This system is aimed to enhance test diagnostic capability and to improve production yield of devices which it is connected to, by-passing the actual losses in time and resources of currently used laser-fuse approach.","PeriodicalId":415606,"journal":{"name":"Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-08-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"11","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MTDT.2004.14","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 11

Abstract

A built-in self-repair (BISR) machine is herewith proposed, able to test at speed and repair embedded static random access memories. Unlike the common approach to blow laser-fuse registers, here the repair operation is completely accomplished by the BISR machine, with no external intervene. The information related to the repair operation is stored into an on-chip FLASH memory. The machine is user programmable, since it can test memories of different capacity, architecture and aspect ratio, with up to four test algorithms and two test flows. An "industrial" test flow is intended for production; while, in case of failure, a more complex "screening flow" allows to distinguish whether the unsuccessful repair operation is due to exceeded redundancy capacity or to faulty FLASH programming. This system is aimed to enhance test diagnostic capability and to improve production yield of devices which it is connected to, by-passing the actual losses in time and resources of currently used laser-fuse approach.

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微可编程内置自修复的sram

提出了一种能够快速测试和修复嵌入式静态随机存储器的内置自修复(BISR)机器。与通常的方法吹激光熔丝寄存器不同，这里的修复操作完全由BISR机器完成，没有外部干预。与修复操作相关的信息存储在片上闪存中。机器是用户可编程的，因为它可以测试不同容量，结构和宽高比的存储器，最多有四个测试算法和两个测试流程。“工业”测试流程用于生产;而在故障的情况下，更复杂的“筛选流程”可以区分失败的修复操作是由于超出冗余容量还是由于错误的FLASH编程。该系统旨在提高测试诊断能力，提高所连接设备的成品率，绕过目前使用的激光熔丝方法在时间和资源上的实际损失。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Records of the 2004 International Workshop on Memory Technology, Design and Testing, 2004.

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