Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer

S. Kariya, T. Matsumae, Y. Kurashima, H. Takagi, M. Hayase, E. Higurashi
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Abstract

Au/Ta/Ti metal multilayer was developed for the improved vacuum packaging process. Wafer-level packaging after degas at 200 °C and absorbing gas molecules at 300 °C were successfully demonstrated using this multilayer. The activation temperature for gas gettering was lower than that of previous studies using the Au/Pt/Ti layer.
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采用Au/Ta/Ti金属键合层气相吸进简化真空封装工艺
为改进真空封装工艺,研制了Au/Ta/Ti金属多层膜。在200°C脱气和300°C吸收气体分子后,使用该多层材料成功地演示了晶圆级封装。与以往使用Au/Pt/Ti层的研究相比,气体捕集的活化温度更低。
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