Deewakar Poudel, Adam Masters, Benjamin Belfore, Elizabeth Palmiotti, A. Rockett, S. Marsillac
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引用次数: 0
Abstract
Copper Indium diselenide (CIS) semiconductor thin films were deposited by single-stage process. Following the deposition, annealing and recrystallization of CIS was carried out in the presence of InCl3 at different temperatures. Increase in grain size was observed by SEM in all cases. Increase in peak intensity was observed by XRD after treatment, correlating well with the SEM results. Measurements of the composition by both XRF and EDS indicate significant changes, notably a decrease in copper content. This will likely be an issue for device performance and will need to be addressed.
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