T. Yokoyama, M. Nishijima, S. Yamamoto, M. Nishitsuji, K. Nishii, M. Nakayama, O. Ishikawa
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引用次数: 9
Abstract
A normally-off MODFET power MMIC has been developed for 1.9 GHz Japanese Personal Handy-phone System (PHS). High power added efficiency (PAE) of 41.7% at the output power (P/sub out/) of 22.0 dBm has been achieved under 3.0 V single-supply condition. The operating current is only 127 mA and the adjacent channel leakage power (P/sub adj/) is -58.2 dBc. Three FETs with their matching circuits are integrated on a very small die (1.1 mm/sup 2/) of the MMIC.
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