{"title":"An InGaP/GaAs HBT MMIC Power Amplifier with an Integrated Diode Linearizer","authors":"M. Zhu, H. Yang, H.Y. Zhang, X.C. Liu","doi":"10.1109/EDSSC.2005.1635239","DOIUrl":null,"url":null,"abstract":"An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifie (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. The fabricated HBT MMIC PA exhibits an output power of 24 dBm and a power-added efficiency as high as 37% at an operation voltage of6.5 V.","PeriodicalId":429314,"journal":{"name":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-12-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2005 IEEE Conference on Electron Devices and Solid-State Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDSSC.2005.1635239","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
An InGaP/GaAs heterojunction bipolar transistor (HBT) monolithic microwave integrated circuit (MMIC) power amplifie (PA) using an improved linearization technique is studied in this paper. This improved linearization technique provides high efficiency at different amplification ofthe modulation as well as high operation voltage. Also the gain compression and the phase distortion of the HBT are effectively improved with no additional DC consumption. The fabricated HBT MMIC PA exhibits an output power of 24 dBm and a power-added efficiency as high as 37% at an operation voltage of6.5 V.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
