Design and Simulation of mm-Wave Diplexer on Substrate and Fan-Out Structure

Yu-Chang Hsieh, Pao-Nan Lee, Chen-Chao Wang
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引用次数: 1

Abstract

Inter-digital and hairpin mmWave diplexer design and simulation based on two types technology: fan-out structure and build-up substrate for n257/n258 and n260 bands in 5G new radio (NR) are demonstrated in this paper. Fan-out structure has advantage of thin profile and smaller process variation. However, high loss dielectric material is a big concern that will increase the loss, especially in mm-wave band. On the other hand, conventional packaging substrate is believed to have smaller insertion loss due to various low loss material options, but the disadvantage is large process tolerance that probably results in significant RF performance variation. The objective of this paper is to study the pros and cons of conventional packaging substrate and advanced fan-out substrate from electrical point of view.
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基于基片和扇出结构的毫米波双工器设计与仿真
本文介绍了5G新无线电(NR)中n257/n258和n260频段基于扇出结构和构筑基板两种技术的数字间和发夹毫米波双工器的设计和仿真。扇形结构具有外形薄、工艺变化小的优点。然而,高损耗介质材料是一个很大的问题,它会增加损耗,特别是在毫米波波段。另一方面,由于各种低损耗材料的选择,传统封装基板被认为具有较小的插入损耗,但缺点是工艺公差大,可能导致显著的射频性能变化。本文的目的是从电学角度研究传统封装基板和先进扇出封装基板的优缺点。
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