Interference of ballistic electrons in semiconductor nanostructure devices

T. Figielski, T. Wosifiski, A. Morawski, A. Makosa, Z. Tkaczyk, J. Wróbel, E. Kamihska, E. Papis, A. Piotrowska, R. Nowakowski
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Abstract

We sttidied ballistic tranyiort throiigh a spare pantimi dot defined in a twodimensional electron gas at a C;cyls/AIC;~s-heterosti~ict~~re inlegace by Schottky gates deposited on the top of the heterostrwctiire. We denionstrarc? that the condtrciance of the dot at a low tenperatiire is controlled by qtianttini ititerj2rence of ballistic elccfrons reflected crt the dot sitle-hotittdarie.s, atid cntt be tiincd by U voliugc applied to the gates dejning posiiions of these boundaries.
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半导体纳米结构器件中弹道电子的干扰
我们研究了在C;cyls/AIC;~s-异质线上沉积肖特基栅极的二维电子气体中定义的一个备用泛点的弹道迁移。我们denionstrarc吗?在低温条件下,网点的导电性是由反射阴极射线管的弹道电子的量子化特性控制的。因此,不能通过应用于设计这些边界位置的门的U voli来确定。
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