E. Morvan, J. Montserrat, P. Godignon, J. Fernandez, D. Flores, M. Locatelli, J. Millán, G. Brezeanu
{"title":"Implantation beam angle study for Al implanted in 6H-SiC","authors":"E. Morvan, J. Montserrat, P. Godignon, J. Fernandez, D. Flores, M. Locatelli, J. Millán, G. Brezeanu","doi":"10.1109/SMICND.1996.557403","DOIUrl":null,"url":null,"abstract":"In this paper a simulation study of Al implantation into 6H-SiC single crystal is presented. Beam orientation with respect to crystal axis has been investigated. This aspect is of crucial importance to achieve good implantation process control. A first step analysis is given and values for optimum ion beam angles are proposed.","PeriodicalId":266178,"journal":{"name":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","volume":"46 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-10-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"1996 International Semiconductor Conference. 19th Edition. CAS'96 Proceedings","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMICND.1996.557403","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this paper a simulation study of Al implantation into 6H-SiC single crystal is presented. Beam orientation with respect to crystal axis has been investigated. This aspect is of crucial importance to achieve good implantation process control. A first step analysis is given and values for optimum ion beam angles are proposed.
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