Testing and diagnosis faults in FinFet circuits based on advanced test algorithm

K. Rayudu, P. S. Rao, K. K. Krishna Prasad
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Abstract

FinFET transistors are used in major semiconductor organizations which plays an important role in the development of the silicon industries. Due to few embedded memories and other circuit issues the transistors have specific faults in manufacturing, designing of the circuit etc. This paper presents an advanced test algorithm to diagnose those faults. The circuit with different gates is designed to identify the places having faults. In addition, two different algorithms such as non-incremental computing algorithm and Adaptive Genetic Algorithm algorithms are used to find the fault location and critical path. The transfer characteristics curve is plotted along with the delay curve which helps in finding out the simulation parameters such as noise margin, propagation delay. The results in the methodology calculates the probability density function of the critical path by estimating mean, standard deviation and variance. The advantages of the integration of the two algorithms in this paper helps in analyzing the specific faults in the circuits and the error correction of the broken link in the path analysis and has enhanced performance. Furthermore, more complicated circuits are analyzed for fault detection with different approach
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基于先进测试算法的FinFet电路故障测试与诊断
FinFET晶体管广泛应用于各大半导体机构,在硅工业的发展中起着重要作用。由于嵌入式存储器和其他电路问题,晶体管在制造、电路设计等方面存在一定的缺陷。本文提出了一种先进的测试算法来诊断这些故障。设计了不同门的电路,以识别有故障的地方。此外,采用非增量计算算法和自适应遗传算法两种不同的算法来寻找故障位置和关键路径。同时绘制了传输特性曲线和延迟曲线,从而确定了噪声裕度、传播延迟等仿真参数。该方法的结果通过估计均值、标准差和方差来计算关键路径的概率密度函数。两种算法结合的优点有助于分析电路中的具体故障和路径分析中断开链路的纠错,提高了性能。在此基础上,对较为复杂的电路进行了故障检测分析
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