{"title":"Vertically-scaled 100nm T-gate AlGaN/GaN HEMTs with 125GHz f/sub T/ and 174GHz f/sub MAX/","authors":"K. Boutros, W. Luo, K. Shinohara","doi":"10.1109/DRC.2005.1553112","DOIUrl":null,"url":null,"abstract":"In this work, we report on vertically scaled, 100nm gate-length Al <sub>0.31</sub>Ga<sub>0.69</sub>N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an f<sub>T</sub> of 125 GHz and an f <sub>max</sub> (U<sub>g</sub>) of 174 GHz. Careful device design and unique process features also resulted in a high peak G<sub>m,ext</sub> of 498 mS/mm, an I<sub>dss</sub> of 1.2A/mm, and a gate-to-drain breakdown of 30V","PeriodicalId":306160,"journal":{"name":"63rd Device Research Conference Digest, 2005. DRC '05.","volume":"12 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2005-06-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"63rd Device Research Conference Digest, 2005. DRC '05.","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2005.1553112","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In this work, we report on vertically scaled, 100nm gate-length Al 0.31Ga0.69N/AlN/GaN HEMTs with a low sheet resistance of 260Omega/square, an fT of 125 GHz and an f max (Ug) of 174 GHz. Careful device design and unique process features also resulted in a high peak Gm,ext of 498 mS/mm, an Idss of 1.2A/mm, and a gate-to-drain breakdown of 30V
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