{"title":"The Low-Temperature Radiation-Hardened Analog Interfaces of Sensors on the Base of BiJFET Array Chips","authors":"A. Titov, I. Pakhomov, A. I. Serebryakov","doi":"10.1109/EWDTS.2018.8524615","DOIUrl":null,"url":null,"abstract":"This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < V<inf>oo</inf> < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux F<inf>n</inf> up to 10<sup>18</sup> n/m<sup>2</sup> and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.","PeriodicalId":127240,"journal":{"name":"2018 IEEE East-West Design & Test Symposium (EWDTS)","volume":"63 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE East-West Design & Test Symposium (EWDTS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EWDTS.2018.8524615","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
This article presents the design results of the precision microcircuit of the instrumentation amplifier (IA) based on the fully differential difference op-amp (FDDA) and the double-channel low pass filter (LPF). It shows that the application of such IA leads to the high parameters of the sensor interface in the stability of output offset voltage (200uV < Voo < 200uV) and common-mode rejection in the extended temperature range −197°C ÷ +27°C and on exposure to the neutron flux Fn up to 1018 n/m2 and absorbed radiation dose D up to 1 Mrad. The results of the IA simulation designed on the base of radiation-hardened BiJFet technology (OJSC “Integral”, Minsk) are given.
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