SOI CMOS as a mainstream low-power technology: a critical assessment

Abstract

This paper provides an overview of SOI MOSFET theory and practice with emphasis on circuit applications issues. Fully and partially depleted channel devices are considered and particular attention is given to describing the so-called floating-body effects that are unique to SOI. Two advanced SOI MOSFET configurations, dual-gate SOI and active body SOI, specifically developed for low voltage circuit applications are also discussed.