{"title":"Low-noise performance near BV/sub CEO/ in a 200 GHz SiGe technology at different collector design points","authors":"D. Greenberg, S. Sweeney, G. Freeman, D. Ahlgren","doi":"10.1109/MWSYM.2003.1210895","DOIUrl":null,"url":null,"abstract":"We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.","PeriodicalId":252251,"journal":{"name":"IEEE MTT-S International Microwave Symposium Digest, 2003","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-06-08","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IEEE MTT-S International Microwave Symposium Digest, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/MWSYM.2003.1210895","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
We explore the low-noise behavior of both high-f/sub T/ and enhanced-breakdown SiGe HBTs, showing key differences as a function of V/sub CB/. Both devices achieve values for F/sub min/ below 0.4, 1.2 and 1.4 dB at 10, 15 and 20 GHz, respectively, with corresponding G/sub A/ values better than 18.5, 14.5 and 13.2 dB. In addition, the enhanced-breakdown device demonstrates the ability to operate at 1 V higher V/sub CB/ compared with the high-f/sub T/ device prior to the onset of avalanche-induced F/sub min/ degradation. Combined with a lower C/sub CB/, this improved V/sub CB/ range allows the device to achieve higher gain for the same or lower noise.
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