Effect of Ni-CNTs on wetting properties, microstructure, and creep resistance of Sn58Bi-0.1Er composite solder

Qi Li, Fengmei Liu, Y. Yi, Xueying Zhang, Haitao Gao
{"title":"Effect of Ni-CNTs on wetting properties, microstructure, and creep resistance of Sn58Bi-0.1Er composite solder","authors":"Qi Li, Fengmei Liu, Y. Yi, Xueying Zhang, Haitao Gao","doi":"10.1109/ICEPT52650.2021.9568164","DOIUrl":null,"url":null,"abstract":"Sn-58Bi-0.1Er solder alloys with different Ni-CNTs contents were prepared by vacuum melting, the influence of Ni-CNTs content on the wetting properties of Sn-58Bi-0.1Er solder was studied. The interface morphology of IMC at Sn-58Bi-0.1Er/Cu joint and the creep resistance of Sn-58Bi-0.1Er/Cu joints with different contents of Ni-CNTs were analyzed. The results showed that when added 0.01~0.05 wt% Ni-CNTs, it enhanced the wettability of composite solder alloy on Cu plate, and the inter metallic compound of Sn58Bi/Cu interface changed from sawtooth Cu6Sn5 to thin layer (Cu, Ni)6Sn5. With the increase amount of Ni-CNTs enhanced particles, it can effectively reduce the thickness of IMC layer at the Sn58Bi-0.1Er/Cu interface. By adding Ni-CNTs particles, the creep fracture life of Sn58Bi-0.1Er/Cu joints was greatly improved. The creep fracture life of the joint was the longest when 0.03 wt%Ni-CNTsadded, which was 25650s. The addition of Ni-CNTs reinforcement particles effectively improved the mechanical properties of the Sn58Bi joint.","PeriodicalId":184693,"journal":{"name":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2021 22nd International Conference on Electronic Packaging Technology (ICEPT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEPT52650.2021.9568164","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

Abstract

Sn-58Bi-0.1Er solder alloys with different Ni-CNTs contents were prepared by vacuum melting, the influence of Ni-CNTs content on the wetting properties of Sn-58Bi-0.1Er solder was studied. The interface morphology of IMC at Sn-58Bi-0.1Er/Cu joint and the creep resistance of Sn-58Bi-0.1Er/Cu joints with different contents of Ni-CNTs were analyzed. The results showed that when added 0.01~0.05 wt% Ni-CNTs, it enhanced the wettability of composite solder alloy on Cu plate, and the inter metallic compound of Sn58Bi/Cu interface changed from sawtooth Cu6Sn5 to thin layer (Cu, Ni)6Sn5. With the increase amount of Ni-CNTs enhanced particles, it can effectively reduce the thickness of IMC layer at the Sn58Bi-0.1Er/Cu interface. By adding Ni-CNTs particles, the creep fracture life of Sn58Bi-0.1Er/Cu joints was greatly improved. The creep fracture life of the joint was the longest when 0.03 wt%Ni-CNTsadded, which was 25650s. The addition of Ni-CNTs reinforcement particles effectively improved the mechanical properties of the Sn58Bi joint.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Ni-CNTs对Sn58Bi-0.1Er复合钎料润湿性能、显微组织和抗蠕变性能的影响
采用真空熔炼法制备了不同Ni-CNTs含量的Sn-58Bi-0.1Er钎料合金,研究了Ni-CNTs含量对Sn-58Bi-0.1Er钎料润湿性能的影响。分析了Ni-CNTs含量不同的Sn-58Bi-0.1Er/Cu接头IMC界面形貌和Ni-CNTs含量不同的Sn-58Bi-0.1Er/Cu接头的抗蠕变性能。结果表明:当添加0.01~0.05 wt% Ni- cnts时,复合钎料合金在Cu板上的润湿性增强,Sn58Bi/Cu界面的金属间化合物由锯齿状Cu6Sn5转变为薄层(Cu, Ni)6Sn5;随着Ni-CNTs增强颗粒数量的增加,可以有效降低Sn58Bi-0.1Er/Cu界面处IMC层的厚度。添加Ni-CNTs颗粒后,Sn58Bi-0.1Er/Cu接头的蠕变断裂寿命大大提高。添加0.03 wt% ni - cnt时,接头的蠕变断裂寿命最长,为25650s。Ni-CNTs增强颗粒的加入有效地改善了Sn58Bi接头的力学性能。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Study on the mechanical properties of ultra-low dielectric film by tensile test Mechanical Behavior of Lead-free Solder at High Temperatures and High Strain Rates Thermal Stress Study of 3D IC Based on TSV and Verification of Thermal Dissipation of STI Defect Localization and Optimization of PIND for Large Size CQFP Devices A Novel Bumping Method for Flip-Chip Interconnection
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1