N. S. Boltovets, V.V. Kholevchuk, R. Konakova, V. F. Mitin, E. F. Venger
{"title":"Ge-film resistance and Si-based diode temperature microsensors","authors":"N. S. Boltovets, V.V. Kholevchuk, R. Konakova, V. F. Mitin, E. F. Venger","doi":"10.1109/ASDAM.2000.889489","DOIUrl":null,"url":null,"abstract":"New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889489","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
New types of miniature temperature sensors based on Ge films and silicon diodes have been developed and produced. The Ge film microthermometers are intended for use at temperatures from 1 to 400 K, and silicon microdiodes cover operating temperature range from 1 to 600 K. The designs of sensitive elements and the miniature package, as well as sensor characteristics, are presented.
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