N. Hirashita, I. Aikawa, T. Ajioka, M. Kobayakawa, F. Yokoyama, Y. Sakaya
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引用次数: 3
Abstract
Enhanced void formation observed for first-level Al-Si lines under a large area of second-level Al-Si lines is discussed. The void formation depended on both the annealing temperature of the second-level metal and cure conditions of spin-on-glass films used for the planarization. Studies of thermal desorption with Fourier transform infrared spectroscopy revealed that the residual Si-OH components in spin-on-glass films provided a significant amount of water outgassing, and that water desorbed through interdielectric films but not through Al-Si films. Pressure-cooking states were produced under the second level Al-Si metal during the metallization anneal. A gaseous pressure mechanism to explain the enhanced void formation is proposed.<>
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