Magnetic resonance methods

J. Cantin
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引用次数: 2

Abstract

In this chapter, we will focus on the study by EPR of point defects in semiconductor materials. Indeed, impurities, vacancies, anti -sites and complexes of them, in a diamagnetic material, may exhibit a local electronic reconstruction favoring unpaired electrons, and consequently, such defects have a nonzero electon spin. Of course, point defects may exist in an S = 0 state and then be EPR silent. Nevertheless, in semiconductors, most of the point defects have several charge states in the gap, and generally, each of them corresponds to a different spin state. Changing the defect charge state by electrical polarization or by light irradiation is then an efficient mean to reveal and detect the defects by EPR.
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在本章中,我们将重点研究半导体材料中点缺陷的EPR研究。事实上,在抗磁性材料中,杂质、空位、反位及其复合物可能表现出有利于未配对电子的局部电子重构,因此,这些缺陷具有非零电子自旋。当然,点缺陷也可能在S = 0状态下存在,然后处于EPR沉默状态。然而,在半导体中,大多数点缺陷在隙中都有几个电荷态,通常每个电荷态对应一个不同的自旋态。通过电极化或光照射改变缺陷的电荷状态是EPR显示和检测缺陷的有效手段。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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