{"title":"Measurement of Young's modulus of nickel silicide film by a surface profiler","authors":"M. Qin, C. Y. Yuen, M. Poon, W. Y. Chan","doi":"10.1109/HKEDM.2000.904217","DOIUrl":null,"url":null,"abstract":"Young's modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson's ratio and the boundary of the structure, Si/sub 3/N/sub 4/ film with a Young's modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350/spl deg/C has a Young's modulus of 132 GPa, which is lower than that that of normal grown polysilicon (/spl sim/160 Gpa) and Si/sub 3/N/sub 4/. It means that the NiSi is a promising structure material for MEMS application.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"93 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/HKEDM.2000.904217","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
Young's modulus of NiSi film formed on crystal silicon is determined by measuring the deflection of the film as a function of the loaded force on the center of it. In order to reduce the error caused by unknown Poisson's ratio and the boundary of the structure, Si/sub 3/N/sub 4/ film with a Young's modulus of 370 Gpa is used as a reference. The results show that NiSi formed at 350/spl deg/C has a Young's modulus of 132 GPa, which is lower than that that of normal grown polysilicon (/spl sim/160 Gpa) and Si/sub 3/N/sub 4/. It means that the NiSi is a promising structure material for MEMS application.
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