Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904236
Jianxin Zhu, R. Shen
In this paper, for a semiconductor material in which the thermal conductivity is varied as a function of depth, we propose an efficient method to inversely compute the depth distribution of optical-absorption coefficient by the surface temperature of the material.
{"title":"A new theoretical treatment for the computation of optical-absorption coefficient in inhomogeneous semiconductor material","authors":"Jianxin Zhu, R. Shen","doi":"10.1109/HKEDM.2000.904236","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904236","url":null,"abstract":"In this paper, for a semiconductor material in which the thermal conductivity is varied as a function of depth, we propose an efficient method to inversely compute the depth distribution of optical-absorption coefficient by the surface temperature of the material.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126141359","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904225
M. Chi, C. Yu, Ming-chen Chen, M. Jeng
New characteristics of direct hole tunneling current in pMOS transistors with ultra-thin gate oxide (2.7 nm) biased in accumulation is reported in this paper. Interestingly, this direct hole current (measured at source/drain at 0v and positive gate bias for charge separation technique) increases initially as the gate is biased from 0v to flat-band (/spl sim/0.7 v), then the hole current decreases rapidly by recombination of electrons accumulation on channel surface as the gate bias close to /spl sim/1.2 v. With further increase of gate bias (>1.2 v), the hole current measured at p+ S/D increases again due to gate-induced-drain-leakage (GIDL) mechanism. The behavior of hole current measured at p+ S/D, which involves mechanisms of direct hole tunneling, holes recombination by accumulation electrons, and GIDL, is useful for process characterization. Examples of edge thickening effect, boron penetration effect, and gate oxide nitridation effect, are illustrated in this paper.
{"title":"New characteristics of direct hole tunneling through ultrathin gate oxide (2.7 nm) in p+/pMOS and its applications","authors":"M. Chi, C. Yu, Ming-chen Chen, M. Jeng","doi":"10.1109/HKEDM.2000.904225","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904225","url":null,"abstract":"New characteristics of direct hole tunneling current in pMOS transistors with ultra-thin gate oxide (2.7 nm) biased in accumulation is reported in this paper. Interestingly, this direct hole current (measured at source/drain at 0v and positive gate bias for charge separation technique) increases initially as the gate is biased from 0v to flat-band (/spl sim/0.7 v), then the hole current decreases rapidly by recombination of electrons accumulation on channel surface as the gate bias close to /spl sim/1.2 v. With further increase of gate bias (>1.2 v), the hole current measured at p+ S/D increases again due to gate-induced-drain-leakage (GIDL) mechanism. The behavior of hole current measured at p+ S/D, which involves mechanisms of direct hole tunneling, holes recombination by accumulation electrons, and GIDL, is useful for process characterization. Examples of edge thickening effect, boron penetration effect, and gate oxide nitridation effect, are illustrated in this paper.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"774 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116163005","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904229
H. Wong, P. Han, M. Poon, Y. Gao
The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm/sup -1/) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper.
{"title":"Investigation of the glassy layer formed at the top of porous silicon films","authors":"H. Wong, P. Han, M. Poon, Y. Gao","doi":"10.1109/HKEDM.2000.904229","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904229","url":null,"abstract":"The surface properties of porous silicon (PS) play a vital role in its applications in optoelectronic devices and PS-based chemical/biological sensory devices. We have investigated the effects of reactive ion etching (RIE) treatment on the surface structures, optical properties and internal stresses of the PS films. Experimental results show that there is a thin layer of glassy, mirror-like material covered on the top of the PS films and the main composites of this layer are silicon oxides. When removing away this layer, the photoluminescence (PL) intensities decrease sharply, micro-Raman resonant peaks (near 516 cm/sup -1/) shift slightly and the intensities reduce significantly. The functions of the top layer and mechanisms of interaction with PS films will be discussed in this paper.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"276 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121362120","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904208
C. Zhu, W. Fong, B. Leung, C. Cheng, C. Surya
Low-frequency noise is investigated in n-type GaN film grown by rf-plasma assisted molecular beam epitaxy. The temperature dependence of the voltage noise power spectra, S/sub v/(f), was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, which can be modeled as the superposition of 1/f (flicker) noise and G-R noise. At f>500 Hz the noise is dominated by G-R noise with activation energies of 360 meV and 65 meV from the conduct band. The results clearly demonstrate the trap origin for both the 1/f noise and G-R noise. At the low-frequency range the fluctuation was dominated by 1/f noise. To determine the origin of the noise we considered both the bulk mobility fluctuation and the trap fluctuation models. Our experimental results showed that rapid thermal annealing (RTA) at 800/spl deg/C resulted in over one order of magnitude decrease in the Hooge parameter. Annealing at temperatures in excess of 1000/spl deg/C resulted in significant increase in the noise. Photoluminescence and X-ray diffraction measurements also showed that the crystallinity of the films improved with RTA at 800/spl deg/C with an accompanying reduction in deep levels. Annealing at 900/spl deg/C and 1000/spl deg/C resulted in an increase in the FWHM of the X-ray diffraction indicative of thermal decomposition of the materials. The results are in excellent agreement with the trend of Hooge parameters as a function of annealing temperature, strongly indicating trap origin of the observed 1/f noise.
{"title":"Study of low-frequency excess noise in RTA annealed n-type gallium nitride","authors":"C. Zhu, W. Fong, B. Leung, C. Cheng, C. Surya","doi":"10.1109/HKEDM.2000.904208","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904208","url":null,"abstract":"Low-frequency noise is investigated in n-type GaN film grown by rf-plasma assisted molecular beam epitaxy. The temperature dependence of the voltage noise power spectra, S/sub v/(f), was examined from 400 K to 80 K in the frequency range between 30 Hz and 100 kHz, which can be modeled as the superposition of 1/f (flicker) noise and G-R noise. At f>500 Hz the noise is dominated by G-R noise with activation energies of 360 meV and 65 meV from the conduct band. The results clearly demonstrate the trap origin for both the 1/f noise and G-R noise. At the low-frequency range the fluctuation was dominated by 1/f noise. To determine the origin of the noise we considered both the bulk mobility fluctuation and the trap fluctuation models. Our experimental results showed that rapid thermal annealing (RTA) at 800/spl deg/C resulted in over one order of magnitude decrease in the Hooge parameter. Annealing at temperatures in excess of 1000/spl deg/C resulted in significant increase in the noise. Photoluminescence and X-ray diffraction measurements also showed that the crystallinity of the films improved with RTA at 800/spl deg/C with an accompanying reduction in deep levels. Annealing at 900/spl deg/C and 1000/spl deg/C resulted in an increase in the FWHM of the X-ray diffraction indicative of thermal decomposition of the materials. The results are in excellent agreement with the trend of Hooge parameters as a function of annealing temperature, strongly indicating trap origin of the observed 1/f noise.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134006515","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904219
C. Y. Yuen, M. Poon, M. Chan, W. Y. Chan, M. Qin
Thin film transistors have been fabricated on the polysilicon from the process of metal induced lateral crystallization and pulsed rapid thermal annealing. The result shows that process of 10 cycles of 1 second at 800/spl deg/C thermal pulse annealing has enhanced the grain sizes and the transistors fabricated have improvement which almost doubled the performance of those without the rapid thermal annealing. This method has high potential for use in the fabrication of thin film transistors on low temperature glass substrate and application in solar cell and LCD.
{"title":"TFT fabrication on MILC polysilicon film with pulsed rapid thermal annealing","authors":"C. Y. Yuen, M. Poon, M. Chan, W. Y. Chan, M. Qin","doi":"10.1109/HKEDM.2000.904219","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904219","url":null,"abstract":"Thin film transistors have been fabricated on the polysilicon from the process of metal induced lateral crystallization and pulsed rapid thermal annealing. The result shows that process of 10 cycles of 1 second at 800/spl deg/C thermal pulse annealing has enhanced the grain sizes and the transistors fabricated have improvement which almost doubled the performance of those without the rapid thermal annealing. This method has high potential for use in the fabrication of thin film transistors on low temperature glass substrate and application in solar cell and LCD.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134502363","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904213
S. Lin, K. Yuan, J. Kuo
This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects.
{"title":"Short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices","authors":"S. Lin, K. Yuan, J. Kuo","doi":"10.1109/HKEDM.2000.904213","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904213","url":null,"abstract":"This paper presents short-channel effects of SOI partially-depleted (PD) dynamic-threshold MOS (DTMOS) devices using a compact model derived from a quasi-2D approach and MEDICI 2D simulation. Based on the analytical model, as verified by the 2D simulation results, the DTMOS device has less short channel effects including drain-induced-barrier-lowering (DIBL)-induced short channel effects.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114501504","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904214
J. Xu., W. Li, K. Chen, J.B. Xu
Hydrogenated amorphous carbon films were prepared by using organic hydrocarbon source, xylene, in a plasma enhanced chemical vapor deposition (PECVD) system. The microstructures and optical properties were investigated by using various kinds of techniques. It was found that there exist sp/sup 2/-structures with aromatic clusters in the films. Moreover, in contrast to a broad single PL peak in methane-based a-C:H films, the PL spectrum of xylene-based a-C:H films contains multiple peaks in blue-green light region, which is influenced by rf power. Field emission was also observed among xylene-based a-C:H films with a high sp/sup 2/ content ratio.
{"title":"Fabrication of amorphous carbon films by using organic hydrocarbon source","authors":"J. Xu., W. Li, K. Chen, J.B. Xu","doi":"10.1109/HKEDM.2000.904214","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904214","url":null,"abstract":"Hydrogenated amorphous carbon films were prepared by using organic hydrocarbon source, xylene, in a plasma enhanced chemical vapor deposition (PECVD) system. The microstructures and optical properties were investigated by using various kinds of techniques. It was found that there exist sp/sup 2/-structures with aromatic clusters in the films. Moreover, in contrast to a broad single PL peak in methane-based a-C:H films, the PL spectrum of xylene-based a-C:H films contains multiple peaks in blue-green light region, which is influenced by rf power. Field emission was also observed among xylene-based a-C:H films with a high sp/sup 2/ content ratio.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"54 6","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"113964103","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904220
S. Chakraborty, P. Lai, C. Chakraborty
The electrical properties of capacitive humidity sensors, based on an aluminium film anodized in phosphoric acid, are investigated. The properties of teflon-deposited or LiCl-coated porous alumina film are also measured. It is found that sensitivity of porous alumina film increases after teflon or LiCl deposition. Moreover, the teflon-deposited alumina sensor exhibits shorter response time.
{"title":"Role of Teflon and LiCl on the humidity-sensing properties of porous anodized alumina film","authors":"S. Chakraborty, P. Lai, C. Chakraborty","doi":"10.1109/HKEDM.2000.904220","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904220","url":null,"abstract":"The electrical properties of capacitive humidity sensors, based on an aluminium film anodized in phosphoric acid, are investigated. The properties of teflon-deposited or LiCl-coated porous alumina film are also measured. It is found that sensitivity of porous alumina film increases after teflon or LiCl deposition. Moreover, the teflon-deposited alumina sensor exhibits shorter response time.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124669968","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904230
B. Yan, E. Yang
The hole-initiated impact ionization multiplication factor M/sub p/-1 and the ionization coefficient /spl alpha//sub p/ in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor M/sub p/-1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.
{"title":"Avalanche multiplication and ionization coefficient in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors","authors":"B. Yan, E. Yang","doi":"10.1109/HKEDM.2000.904230","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904230","url":null,"abstract":"The hole-initiated impact ionization multiplication factor M/sub p/-1 and the ionization coefficient /spl alpha//sub p/ in AlGaAs/InGaAs p-n-p heterojunction bipolar transistors are presented. A large departure is observed at low electric field when comparison is made between the measured data and those obtained from avalanche photodiode measurements. The results show that the conventional impact ionization models, based on local electric field, substantially overestimate the hole impact ionization multiplication factor M/sub p/-1 and the hole ionization coefficient in p-n-p heterojunction bipolar transistors where significant dead space effects occur in the collector space charge region.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123778295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2000-06-24DOI: 10.1109/HKEDM.2000.904209
J. Z. He, J.B. Xu, M.S. Xu, J. Xu, C.H. Ng, I. Wilson
Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.
{"title":"Direct observation of ordered structures during oxidation of Si(111)","authors":"J. Z. He, J.B. Xu, M.S. Xu, J. Xu, C.H. Ng, I. Wilson","doi":"10.1109/HKEDM.2000.904209","DOIUrl":"https://doi.org/10.1109/HKEDM.2000.904209","url":null,"abstract":"Variable-temperature ultra high vacuum scanning tunnelling microscopy (VTUHVSTM) has been employed to study the initial stage of Si(111) oxidation. By taking advantage of the in-situ arrangement of the experiment, we are able to constantly monitor the surface structure during the whole oxidation process at elevated temperatures. Ordered structures of oxides from a submonolayer to a full monolayer were observed at atomic level. Our preliminary results may give a clue to one of the fundamental issues of silicon technology: why amorphous silicon dioxide can form a perfect interface with the crystalline silicon substrate.","PeriodicalId":178667,"journal":{"name":"Proceedings 2000 IEEE Hong Kong Electron Devices Meeting (Cat. No.00TH8503)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2000-06-24","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127821841","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
京公网安备 11010802042870号
京ICP备2023020795号-1
扫码关注我们
求助内容：
应助结果提醒方式：