M.A. Khan, J. N. Kuznia, D. Olson, W. Schaff, J. Burm, M. Shur
{"title":"Deep submicron AlGaN/GaN heterostructure field effect transistors for nficrowave and high temperature applications","authors":"M.A. Khan, J. N. Kuznia, D. Olson, W. Schaff, J. Burm, M. Shur","doi":"10.1109/DRC.1994.1009451","DOIUrl":null,"url":null,"abstract":"","PeriodicalId":244069,"journal":{"name":"52nd Annual Device Research Conference","volume":"16 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1994-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"52nd Annual Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1994.1009451","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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