Dynamically stable polarization characteristics of oxide-confinement vertical-cavity surface-emitting lasers grown on GaAs(311)A substrate

1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application Pub Date : 1997-08-11 DOI:10.1109/LEOSST.1997.619093

M. Takahashi, N. Egami, A. Mizutani, A. Matsutani, F. Koyama, K. Iga

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Abstract

We experimentally demonstrated that the polarization mode of a VCSEL can be well controlled even under direct modulation by using the optical anisotropy of (n11)-oriented QWs. A schematic diagram is shown of a (311)A-oriented VCSEL with an oxide confinement structure. The epitaxial layer was grown on a GaAs(311)A substrate by molecular beam epitaxy. The active region consists of In/sub 0.2/Ga/sub 0.8/As double quantum wells centered in a single-wavelength-thick Al/sub 0.5/Ga/sub 0.5/As cavity. The upper and bottom DBR mirrors consist of a 25- and 22.5-pair AlAs/GaAs quarter-wave stack, respectively. A typical L-I characteristic is shown under continuous wave (CW) operation at 25/spl deg/C. The threshold current is 1.0 mA, and the lasing wavelength is around 990 nm.

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GaAs(311)A衬底上生长的氧化约束垂直腔面发射激光器的动态稳定偏振特性

我们通过实验证明，利用(n11)取向量子阱的光学各向异性可以很好地控制VCSEL的偏振模式，即使在直接调制的情况下。示出具有氧化物约束结构的(311)A取向VCSEL的示意图。采用分子束外延法在GaAs(311) a衬底上生长外延层。有源区由以单波长厚Al/sub 0.5/Ga/sub 0.5/As腔为中心的In/sub 0.2/Ga/sub 0.8/As双量子阱组成。上面和底部DBR反射镜分别由25对和22.5对AlAs/GaAs四分之一波堆叠组成。在25/spl℃的连续波(CW)工作下，显示出典型的L-I特性。阈值电流为1.0 mA，激光波长约为990nm。

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1997 Digest of the IEEE/LEOS Summer Topical Meeting: Vertical-Cavity Lasers/Technologies for a Global Information Infrastructure/WDM Components Technology/Advanced Semiconductor Lasers and Application

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