{"title":"CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead","authors":"C. Ferekides, C. Hsu","doi":"10.23919/AM-FPD.2019.8830556","DOIUrl":null,"url":null,"abstract":"This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/AM-FPD.2019.8830556","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.