Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830580
James W. Borchert, U. Zschieschang, F. Letzkus, M. Giorgio, M. Caironi, J. Burghartz, S. Ludwigs, H. Klauk
Organic thin-film transistors are interesting candidates for the realization of low-power displays and other electronics on unconventional and flexible substrates. However, the adoption of organic TFTs in these applications has yet to be realized primarily due to high contact resistance. Here, we present a method for fabricating flexible organic TFTs with contact resistance as low as 29 Ωcm, a record for organic TFTs. In addition, these TFTs show other remarkable or record characteristics such as high on/off current ratio (as high as 1010), low subthreshold swing (as small as 59 mV/decade at 292 K), small stage delay (79 ns measured in an 11-stage ring oscillator) and high transit frequency (as high as 21 MHz). These results were obtained in ambient measurement conditions at low voltages of around 3 V.
{"title":"Flexible low-voltage organic thin-film transistors with low contact resistance and high transit frequencies","authors":"James W. Borchert, U. Zschieschang, F. Letzkus, M. Giorgio, M. Caironi, J. Burghartz, S. Ludwigs, H. Klauk","doi":"10.23919/AM-FPD.2019.8830580","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830580","url":null,"abstract":"Organic thin-film transistors are interesting candidates for the realization of low-power displays and other electronics on unconventional and flexible substrates. However, the adoption of organic TFTs in these applications has yet to be realized primarily due to high contact resistance. Here, we present a method for fabricating flexible organic TFTs with contact resistance as low as 29 Ωcm, a record for organic TFTs. In addition, these TFTs show other remarkable or record characteristics such as high on/off current ratio (as high as 1010), low subthreshold swing (as small as 59 mV/decade at 292 K), small stage delay (79 ns measured in an 11-stage ring oscillator) and high transit frequency (as high as 21 MHz). These results were obtained in ambient measurement conditions at low voltages of around 3 V.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"2 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115521726","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Sputtered TNO films with various thicknesses were prepared and post-annealed by single step (vacuum or O2) and dual steps (vacuum + O2 or O2 + vacuum) at 300 °C. The TNO films (20–110 nm) with vacuum annealing are polycrystalline and conductive. After treated by vacuum + O2 annealing, thick TNO films (40–110 nm) exhibit O-poor state with low resistivity in comparison with insulating 20 nm TNO film. In contrast, the TNO films treated by O2 or O2 + vacuum annealing are insulating or with large resistivity. Besides, the vacuum annealed 20 nm TNO film presents abnormal properties, such as larger lattice constant and lower optical band gap, which is probably induced by the stress from substrates or grains.
{"title":"Structural, optical and electrical properties of sputtered Nb doped TiO2 transparent conductive films","authors":"Letao Zhang, Hongyang Zuo, Qian Ma, Shengdong Zhang","doi":"10.23919/AM-FPD.2019.8830557","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830557","url":null,"abstract":"Sputtered TNO films with various thicknesses were prepared and post-annealed by single step (vacuum or O2) and dual steps (vacuum + O2 or O2 + vacuum) at 300 °C. The TNO films (20–110 nm) with vacuum annealing are polycrystalline and conductive. After treated by vacuum + O2 annealing, thick TNO films (40–110 nm) exhibit O-poor state with low resistivity in comparison with insulating 20 nm TNO film. In contrast, the TNO films treated by O2 or O2 + vacuum annealing are insulating or with large resistivity. Besides, the vacuum annealed 20 nm TNO film presents abnormal properties, such as larger lattice constant and lower optical band gap, which is probably induced by the stress from substrates or grains.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122155294","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830563
L. Ono, Y. Qi
On the basis of concerted research efforts worldwide, there is no doubt that outstanding power conversion efficiency (PCE) can be achieved in perovskite solar cells. However, to move forward this technology towards commercialization, developments of strategies to achieve long term stability is important. At OIST, a team of researchers in the Energy Materials and Surface Sciences Unit has been making concerted efforts to develop processes aiming at high PCE, high-throughput, minimum batch-to-batch variation, compatible with large-area perovskite solar cells and modules, low toxicity, and long-term stability. Optimization of hole transport materials (HTMs) is important for enhancing solar power conversion efficiency and improving stability. In this talk, we will present our latest understanding of fundamental interactions between Li-bis(trifluoromethanesulfonyl)-imide (LiTFSI), 4-tert-butylpyridine (t-BP) and spiro-MeOTAD and how different gas exposures (e.g., exposure to O2, H2O, N2) influences electronic structures and conductivity of such HTM films. In addition, we will propose further strategies to improve perovskite solar cell performance and stability.
{"title":"Influences of Spiro-MeOTAD Hole Transport Layer on the Long-term Stabilities of Perovskite-based Solar Cells","authors":"L. Ono, Y. Qi","doi":"10.23919/AM-FPD.2019.8830563","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830563","url":null,"abstract":"On the basis of concerted research efforts worldwide, there is no doubt that outstanding power conversion efficiency (PCE) can be achieved in perovskite solar cells. However, to move forward this technology towards commercialization, developments of strategies to achieve long term stability is important. At OIST, a team of researchers in the Energy Materials and Surface Sciences Unit has been making concerted efforts to develop processes aiming at high PCE, high-throughput, minimum batch-to-batch variation, compatible with large-area perovskite solar cells and modules, low toxicity, and long-term stability. Optimization of hole transport materials (HTMs) is important for enhancing solar power conversion efficiency and improving stability. In this talk, we will present our latest understanding of fundamental interactions between Li-bis(trifluoromethanesulfonyl)-imide (LiTFSI), 4-tert-butylpyridine (t-BP) and spiro-MeOTAD and how different gas exposures (e.g., exposure to O2, H2O, N2) influences electronic structures and conductivity of such HTM films. In addition, we will propose further strategies to improve perovskite solar cell performance and stability.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132013185","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830606
R. Miyazaki, A. Hara
We previously reported four-terminal polycrystalline germanium-tin (poly-Ge1−xSnx) thin-film transistors (TFTs) on glass substrates and succeeded in an independent operation of top (TG) and bottom (BG) gates. However, the gate dielectric used in the previous experiment was silicon-dioxide (SiO2) for both TG and BG. Thus, the subthreshold swing and controllability of the threshold voltage were insufficient. In the experiment conducted in this study, we applied a high-k gate dielectric (HfO2) for BG and compared the performance between the TG and BG drives. Moreover, we compared the performance of the TFTs in this study with our previous poly-Ge1−xSnx TFTs using a SiO2 gate stack. As a result, an improved TFT performance was confirmed using the high-k dielectric.
{"title":"Four-terminal Cu-MIC Poly-Ge1−xSnx TFT with a High-k Bottom-gate Dielectric","authors":"R. Miyazaki, A. Hara","doi":"10.23919/AM-FPD.2019.8830606","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830606","url":null,"abstract":"We previously reported four-terminal polycrystalline germanium-tin (poly-Ge1−xSnx) thin-film transistors (TFTs) on glass substrates and succeeded in an independent operation of top (TG) and bottom (BG) gates. However, the gate dielectric used in the previous experiment was silicon-dioxide (SiO2) for both TG and BG. Thus, the subthreshold swing and controllability of the threshold voltage were insufficient. In the experiment conducted in this study, we applied a high-k gate dielectric (HfO2) for BG and compared the performance between the TG and BG drives. Moreover, we compared the performance of the TFTs in this study with our previous poly-Ge1−xSnx TFTs using a SiO2 gate stack. As a result, an improved TFT performance was confirmed using the high-k dielectric.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131583760","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830589
David S. Hermann
Many developments within Connectivity, Autonomous driving, Shared mobility and Electrification (“CASE”) are expected in the automotive industry as it enters the next decade. Several different enabling technologies are required for this, such as wireless communications and antenna technologies for Connectivity; advanced sensor technologies such as radar, camera, and lidar, as well as advanced software such as artificial intelligence, for Autonomous Driving; fleet management, service bookings, subscription plans for Shared Mobility; and, advanced battery technologies, electric powertrains and charging infrastructure for Electrification. However, without a user interface to manage all these features, they will be cumbersome or impossible to use. In this paper, we describe how the case is building for display technology, as a key enabler for all these developments.
{"title":"The CASE is Building for Automotive Displays","authors":"David S. Hermann","doi":"10.23919/AM-FPD.2019.8830589","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830589","url":null,"abstract":"Many developments within Connectivity, Autonomous driving, Shared mobility and Electrification (“CASE”) are expected in the automotive industry as it enters the next decade. Several different enabling technologies are required for this, such as wireless communications and antenna technologies for Connectivity; advanced sensor technologies such as radar, camera, and lidar, as well as advanced software such as artificial intelligence, for Autonomous Driving; fleet management, service bookings, subscription plans for Shared Mobility; and, advanced battery technologies, electric powertrains and charging infrastructure for Electrification. However, without a user interface to manage all these features, they will be cumbersome or impossible to use. In this paper, we describe how the case is building for display technology, as a key enabler for all these developments.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"50 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127518848","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830600
Yafang Wang, Zhaogui Wang, Chuan Liu
We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.
{"title":"The Indium-Gallium-Tin-Oxide thin film transistor with better performance based on the solution procession","authors":"Yafang Wang, Zhaogui Wang, Chuan Liu","doi":"10.23919/AM-FPD.2019.8830600","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830600","url":null,"abstract":"We newly prepared indium-gallium-tin-oxide (In-Ga-Sn-O) thin film by solution process for TFT active layer. The spin-coated IGTO film exhibits an excellent transparency that is over 90% at the spectral range from 290nm to 800nm. The saturation filed effect mobility of bottle-gate and top-contact IGTO TFT can be increased from 10 cm2/Vs to 13 cm2/Vs by adjusting the elements ratio of In and Sn. The ΔVTH was 0.8V and -1.8V respectively under positive gate bias stressing (PGBS) and negative gate bias stressing (NGBS) with stress time for 3600s. The spin-coated IGTO film pre-heated in water vapor performed more stable in gate voltage forth-back scanning and obtained higher on-current than those not preheated by water vapor. In addition, the short channel device has better performance in our study. By comparison, solution-process based IGTO TFT performs better than many IGZO TFTs. The results may provide a new choice for oxide-based TFTs, displays and transparent electronics.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"367 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129160509","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830556
C. Ferekides, C. Hsu
This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.
{"title":"CdTe Thin Film PV: How Has the Technology Evolved and What Challenges Lie Ahead","authors":"C. Ferekides, C. Hsu","doi":"10.23919/AM-FPD.2019.8830556","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830556","url":null,"abstract":"This paper reviews the evolution of CdTe photovoltaics since the first CdTe/CdS solar cells were reported in the early 70’s with modest efficiencies (~5%). Today’s commercial CdTe thin film modules have areas of 2.5 m2 and efficiencies of 17–18%; small area cells are over 22% efficiency. In reaching this performance, the typical/original CdTe/CdS hetero-structure evolved into a CdTe/Cd(Se)Te/MZO (Magnesium Zing Oxide). The technology continues to rely on a post-deposition heat-treatment (in the presence of CdCl2), and the use of Cu (p-type dopant) for the formation of the back contact. Advancing performance to higher levels will depend on the CdTe community’s ability to address key device and material properties (net p-type doping) that limit the cell’s open circuit voltage to 0.9 Volts.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"26th 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130408274","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2019-07-02DOI: 10.23919/AM-FPD.2019.8830561
Kenji Yamamoto
High-efficiency back-contact heterojunction crystalline Si (c-Si) solar cell with a record-breaking conversion efficienciy of 26.7% is reported. The importance of thin-film Si solar cell technology for heterojunction c-Si solar cells with amorphous Si passivation layers in improving conversion efficiency and reducing production cost is demonstrated. Owing to the recent improvement of c-Si solar cells and perovskite solar cells, conversion efficiencies over 30% have become a realistic target by using a two-terminal tandem structure with a heterojunction c-Si solar cell and a perovskite solar cell.
{"title":"Towards the Record Efficiency of Si Based Solar Cells","authors":"Kenji Yamamoto","doi":"10.23919/AM-FPD.2019.8830561","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830561","url":null,"abstract":"High-efficiency back-contact heterojunction crystalline Si (c-Si) solar cell with a record-breaking conversion efficienciy of 26.7% is reported. The importance of thin-film Si solar cell technology for heterojunction c-Si solar cells with amorphous Si passivation layers in improving conversion efficiency and reducing production cost is demonstrated. Owing to the recent improvement of c-Si solar cells and perovskite solar cells, conversion efficiencies over 30% have become a realistic target by using a two-terminal tandem structure with a heterojunction c-Si solar cell and a perovskite solar cell.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125699419","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Polyimide (PI) based photo-resistance films were treated by different CF4 plasma modes to serve as a bank material for inkjet printing OLED. The original PI film shows a moderate hydrophobicity with a 23.8° contact angle for PGMEA. However, the surface of PI film will become hydrophobic after treated by CF4 plasma with PE mode. In contrast, CF4 plasma with etch mode is apt to form a hydrophilic PI surface because of the ion bombardment.
{"title":"Plasma mode influences on the surface hydrophobization of polyimide","authors":"Letao Zhang, Hongyang Zuo, Qian Ma, Shengdong Zhang, Liangfen Zhang, Xiao-xing Zhang, Y. Hsu","doi":"10.23919/AM-FPD.2019.8830553","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830553","url":null,"abstract":"Polyimide (PI) based photo-resistance films were treated by different CF4 plasma modes to serve as a bank material for inkjet printing OLED. The original PI film shows a moderate hydrophobicity with a 23.8° contact angle for PGMEA. However, the surface of PI film will become hydrophobic after treated by CF4 plasma with PE mode. In contrast, CF4 plasma with etch mode is apt to form a hydrophilic PI surface because of the ion bombardment.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124081885","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
We have developed low power consumption 6.18″ WQHD+ flexible AMOLED display with highly efficient top-emission type Blue OLED and successfully launched its mass production. For the next step, we develop more reliable flexible AMOLED display composed by a hole transport material with deep HOMO level and high hole injection property, and a hole-blocking material with shallow LUMO level and strong electron braking ability.
{"title":"Mass Production Technology of Flexible AMOLED Displays and Improvement of the OLED Device Characteristics","authors":"Yuto Tsukamoto, Tokiyoshi Umeda, M. Mizusaki, Masakazu Shibasaki, Naoki Uetake, Shin’ichi Kawato, Shinji Shimada","doi":"10.23919/AM-FPD.2019.8830624","DOIUrl":"https://doi.org/10.23919/AM-FPD.2019.8830624","url":null,"abstract":"We have developed low power consumption 6.18″ WQHD+ flexible AMOLED display with highly efficient top-emission type Blue OLED and successfully launched its mass production. For the next step, we develop more reliable flexible AMOLED display composed by a hole transport material with deep HOMO level and high hole injection property, and a hole-blocking material with shallow LUMO level and strong electron braking ability.","PeriodicalId":129222,"journal":{"name":"2019 26th International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD)","volume":"48 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2019-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124408090","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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