Analytical studies on temperature dependence of DC characteristics of InP/GaAsSb double heterojunction bipolar transistors

H. Wang, Y. Tian
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Abstract

In this work, an analytic study of DC characteristics based on the drift-diffusion approach has been performed for the InP/GaAsSb DHBTs. The current transport of InP/GaAsSb/InP DHBTs has been investigated focusing the device temperature dependence. Our simulation results show that, at room temperature, the DC characteristics of the InP/GaAsSb/InP DHBTs is similar to the conventional InP-based HBT using InGaAs as the base layer although a type-II energy band alignment is presented in the InP/GaAsSb HBT. However, due to different mechanisms for the electron injection from the emitter induced by the different conduction band alignments, the InP/GaAsSb HBTs may present a different temperature dependent behavior in term of device current gain as compared to the conventional InP/InGaAs HBTs. Higher current gain could be achieved by the InP/GaAsSb HBTs at elevated temperature.
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InP/GaAsSb双异质结双极晶体管直流特性的温度依赖性分析研究
在这项工作中,基于漂移-扩散方法对InP/GaAsSb dhbt进行了直流特性的分析研究。以器件温度依赖性为重点,研究了InP/GaAsSb/InP DHBTs的电流输运。模拟结果表明,在室温下,InP/GaAsSb/InP dhbt的直流特性与使用InGaAs作为基层的传统InP基HBT相似,尽管InP/GaAsSb HBT中存在ii型能带对准。然而,由于不同导带排列引起的发射极电子注入机制不同,与传统的InP/InGaAs HBTs相比,InP/GaAsSb HBTs在器件电流增益方面可能表现出不同的温度依赖行为。在较高的温度下,InP/GaAsSb HBTs可以获得更高的电流增益。
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