High-temperature quasi-saturation model of high-voltage DMOS power devices

C.L. Yang, J. Kuo
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Abstract

This paper reports the analysis of the high-temperature (300 K-400 K) quasi-saturation behavior of high-voltage DMOS devices using a closed-form quasi-saturation model. Based on the analytical model, at the higher temperature, the quasi-saturation behavior occurs at a smaller gate voltage due to the smaller saturated velocity as verified by the MEDICI results.
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高压DMOS功率器件的高温准饱和模型
本文采用闭式准饱和模型分析了高压DMOS器件的高温(300 K-400 K)准饱和行为。基于解析模型,在较高的温度下,由于饱和速度较小,在较小的栅极电压下发生准饱和行为,这一点得到了MEDICI结果的验证。
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