{"title":"Calculated high frequency performance of an npn Si/sub 1-x/Ge/sub x/ HBT","authors":"M. Racanelli, D. Greve","doi":"10.1109/CORNEL.1989.79830","DOIUrl":null,"url":null,"abstract":"The authors calculate the performance of an Si/sub 1-x/Ge/sub x//Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as f/sub max/, which are strongly influenced by the base resistance. For devices with 1- mu m geometry, the authors predict f/sub max/=81 GHz and f/sub T/=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential.<<ETX>>","PeriodicalId":445524,"journal":{"name":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","volume":"14 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1989-08-07","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings., IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits,","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1989.79830","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The authors calculate the performance of an Si/sub 1-x/Ge/sub x//Si HBT (heterojunction bipolar transistor), including effects of major importance such as bandgap narrowing and collector high injection. A description of the mobility model used is included. The results indicate that very high performance is achievable in these devices, particularly with respect to figures of merit such as f/sub max/, which are strongly influenced by the base resistance. For devices with 1- mu m geometry, the authors predict f/sub max/=81 GHz and f/sub T/=71 GHz. Such devices should also offer excellent performance in digital circuits in which low base resistance is essential.<>
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
