L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani
{"title":"GaAs Balanced Amplifier for Ka-Band Space Communications System","authors":"L. Pantoli, A. Barigelli, G. Leuzzi, F. Vitulli, A. Suriani","doi":"10.23919/eumc.2018.8541777","DOIUrl":null,"url":null,"abstract":"The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.","PeriodicalId":248339,"journal":{"name":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-09-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 13th European Microwave Integrated Circuits Conference (EuMIC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/eumc.2018.8541777","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The paper deals with the development of a state-of-the-art medium level amplifier able to combine good noise performance with a high P1dB compression point. The MMIC is realized with a balanced structure and making use of the PH25 GaAs pHEMT process provided by UMS. The balanced structure allows to achieve a gain of 19 dB with a P1dB compression point greater than 15 dBm and a noise figure of about 3 dB in a large bandwidth spanning from 26.5 GHz to 31.5 GHz. The chip has a single bias pad; the input and output bond wires are directly matched on chip, so easingenhancing the mechanical integration in the front-end.