First Principles Based Compact Model for 2D-Channel MOSFETs

Abstract

We propose a generalized compact model for any two-dimensional material channel-based metal-oxide-semiconductor field-effect transistors. Unlike existing ones, the proposed model is first principles based and thus has ability to predict the circuit performance only using the crystallographic information of the channel material. It is ‘core’ in nature and developed following the industry-standard drift-diffusion formalism based ‘top-down’ hierarchy employing the Fermi-Dirac statistics. We also implement the model in professional circuit simulator and good convergence is observed in 15-stage ring oscillator simulation.