Chih-Hung Chen, M. Deen, M. Matloubian, Yuhua Cheng
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引用次数: 14
Abstract
An extraction method to obtain the channel thermal noise in MOSFETs directly from DC, scattering parameter and RF noise measurements is presented. In this extraction method, the transconductance (g/sub m/), output resistance (R/sub DS/), and source and drain resistances (R/sub S/ and R/sub D/) are obtained from DC measurements. The gate resistance (R/sub G/) is extracted from scattering-parameter measurements, and the equivalent noise resistance (R/sub n/) is obtained from RF noise measurements. This method has been verified by using the measured data of a 0.36 /spl mu/m n-type MOSFET up to 18 GHz.
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