{"title":"Performance evaluation of SiC based bidirectional dc-dc buck-boost converter operating in CCM using temperature-dependent L3 spice model","authors":"N. Kondrath, M. Al-Chalabi","doi":"10.1109/IECON.2015.7392745","DOIUrl":null,"url":null,"abstract":"Wide-band gap devices are gaining popularity in high-power, high-temperature applications such as hybrid/full electric vehicles. A 27 kW synchronous bidirectional pulse-width modulated (PWM) dc-dc buck-boost converter operating in continuous conduction mode (CCM) is designed. The designed converter is tested using Silicon Carbon (SiC) and Silicon (Si) devices at different temperatures using LTSpice simulations. Steady-state as well as switching transition performances are evaluated and compared for converters using SiC and Si devices.","PeriodicalId":190550,"journal":{"name":"IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"IECON 2015 - 41st Annual Conference of the IEEE Industrial Electronics Society","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IECON.2015.7392745","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Wide-band gap devices are gaining popularity in high-power, high-temperature applications such as hybrid/full electric vehicles. A 27 kW synchronous bidirectional pulse-width modulated (PWM) dc-dc buck-boost converter operating in continuous conduction mode (CCM) is designed. The designed converter is tested using Silicon Carbon (SiC) and Silicon (Si) devices at different temperatures using LTSpice simulations. Steady-state as well as switching transition performances are evaluated and compared for converters using SiC and Si devices.
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