{"title":"Characterization of GaAs(001) step-terraced morphology formation","authors":"I. O. Akhundov, A. Kozhukhov, V. Alperovich","doi":"10.1109/EDM.2012.6310193","DOIUrl":null,"url":null,"abstract":"Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.","PeriodicalId":347076,"journal":{"name":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","volume":"28 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-07-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Conference and Seminar of Young Specialists on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2012.6310193","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Step-terraced morphology formation of a crystal surface is described by means of two-dimensional autocorrelation functions and Fourier transforms of the surface relief and by the full length of monatomic steps. This approach is applied for characterization of thermal smoothing kinetics of GaAs(001) “epi-ready” substrates in the conditions close to equilibrium between the surface and gallium and arsenic vapors.
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