H. Rodilla, T. González, M. Malmkvist, E. Lefebvre, G. Moschetti, J. Grahn, J. Mateos
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引用次数: 1
Abstract
In this work we present a Monte Carlo study of the influence of the presence of a native oxide which isolates the gate in InAs/AlSb high electron mobility transistors (HEMTs) on their dc and ac performance. A good agreement between simulations and experimental results of I-V curves and small signal equivalent circuit parameters has been found for low VDS, where impact ionization is not of importance. The comparison between intrinsic MC simulation results for isolated-gate and Schottky-gate HEMTs reveals a strong influence of the native oxide on the dynamic behavior of the devices, mainly on Cgs, gm and fc.
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