Temperature Response on NPN and PNP Bipolar Junction Transistors after Total Ionizing Dose Irradiation Exposure

Abstract

A temperature-dependent analytical model for total-ionizing-dose-induced excess base current in BJTs is proposed. Model captures base current evolution with temperature on irradiated parts. In this work, BJTs are irradiated at room temperature. Base currents are obtained and the concentrations of oxide defects created during irradiation are calculated. Both base current and defect densities resulting from room temperature irradiations are used as inputs to SPICE simulations and the analytical model. Experimental data obtained from measurements at both low and high temperatures on parts irradiated at room temperature are shown to compare well to the simulation results and analytical model over a range of temperatures.