{"title":"Ammonothermal technology for bulk gallium nitride crystals","authors":"D. Ehrentraut, T. Fukuda","doi":"10.1109/ICIPRM.2010.5516027","DOIUrl":null,"url":null,"abstract":"The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.","PeriodicalId":197102,"journal":{"name":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-07-23","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.2010.5516027","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The growth of bulk gallium nitride crystals can only be made from the vapor or liquid phase. The ammonothermal method is emerging as a potential alternative to the hydride vapor phase growth method. A short outline over the technology and some of the recent results from the acidic ammonothermal growth of GaN are presented.
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