A 20–28 GHz Four-Stack Millimeter-Wave Power Amplifier with 22.2-dBm Psat in 22-nm FDSOI Technology

Bowen Xia, Wen-hua Chen, Long Chen, Zhenghe Feng
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Abstract

In this paper, a 20–28 GHz four-stack millimeter-wave power amplifier (PA) is presented. The proposed P A adopted four-stack technology to raise the supply voltage to 3.3 V, which greatly increased the output power to 22.2dBm at 22GHz without complex power combining techniques and avoiding efficient loss introduced by combining network and DC-DC converter. Thanks to the transformer-based wideband matching network, the proposed PA provides more than 11.8 dB gain and 19.1dBm maximum power between 20–28 GHz. The proposed P A also has a compact size occupying only $900\mu \mathrm{m} {}^{*}500\mu \mathrm{m}$ in 22nm FDSOI technology including all pads and seal ring.
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采用22nm FDSOI技术的22.2 dbm Psat的20 - 28ghz四叠毫米波功率放大器
本文设计了一种20 - 28ghz四叠毫米波功率放大器。本文提出的P - A采用四叠技术将电源电压提升到3.3 V,在22GHz时大幅提升输出功率至22.2dBm,无需复杂的功率组合技术,避免了网络与DC-DC变换器组合带来的高效损耗。由于基于变压器的宽带匹配网络,所提出的PA在20-28 GHz之间提供超过11.8 dB的增益和19.1dBm的最大功率。所提出的pa还具有紧凑的尺寸,在22nm FDSOI技术中,包括所有焊盘和密封圈在内,仅占$900\mu \mathrm{m} {}^{*}500\mu \mathrm{m}$。
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